Lashkar Vadim Evgenjevich

Vadim Evgen'evich Lashkarev was born in 1903 in Kiev. In the same city, he graduated. Then he worked in Leningrad.

The first years of creative activity Lashkaryov coincided with the years of repression, which began after the assassination of Kirov in 1934. Vadim Evgenjevich was arrested and exiled to Arkhangelsk, where he headed the department of physics in medical school before 1939.

Subsequent years of life Lashkarev held in Kiev, leaving behind a lot of students who were then known scientists.

In 1941 he published the article "Investigation of locking layers by the thermal probe and co-authored with K. M. Kosonogovoy article" Effect of impurities on the valve photoelectric effect in cuprous oxide ".

Vadim Evgen'evich found that on both sides of the barrier layer, located parallel to the interface between the copper-cuprous oxide, the signs of the carrier opposite. This phenomenon is called the pn junction (p - from the positive, n - of negative).

Also Vadim Evgen'evich was discovered the mechanism of injection - the most important phenomenon on the basis of which are semiconductor diodes and transistors.

A working transistor, made by Bardeen and Brattain appeared only seven years later, after the article Lashkaryov
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. In 1950, Vadim Evgen'evich and VI Liashenko published "Electronic states at the semiconductor surface", . in which they described the results of studies of surface phenomena in semiconductors, . posited in the future in the framework of integrated circuits based on field-effect transistors,
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Under the leadership of Lashkaryov in the early fifties at the Institute of Physics, National Academy of Sciences of Ukraine was organized by the production of point-contact transistor.

In 1960 was established Institute of Semiconductors of NAS. Its director was appointed Vadim Evgen'evich Lashkarev.

In 1974, Academician Vadim Evgen'evich Lashkarev died.